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槽式堿拋光清洗設(shè)備

產(chǎn)品與服務(wù) > 濕法設(shè)備系列 > 槽式堿拋光清洗設(shè)備

槽式堿拋光清洗設(shè)備

用于擴散后的硅片拋光刻蝕、清洗處理,以及搭配雙面電池背面制絨、清洗處理。


設(shè)備名稱 Equipment Name

槽式堿拋光清洗設(shè)備  Batch-type Alkaline Polishing Equipment

設(shè)備型號 Equipment Model

SC-CSZJ9600E-15F

設(shè)備用途 Equipment Application

用于擴散后的硅片拋光刻蝕、清洗處理,以及搭配雙面電池背面制絨、清洗處理。
This equipment is used for polishing, etching and cleaning treatment of diffused wafers and also compatible for texturing and cleaning treatment of bifacial solar cells.

工藝流程 Process Flow

預(yù)清洗→拋光→后清洗(或O3清洗)→酸洗→預(yù)脫水→烘干(供參考)。
Pre-cleaning→Polishing→Post-cleaning/ O3 cleaning→Acid cleaning→Hot water drying→Drying (for reference only)

技術(shù)特點  Features 

1. 產(chǎn)能:400片/批,9600片/小時(210硅片);480片/批,12000片/小時(182硅片)。

Throughput: 400pcs/batch,9600pcs/h(210 wafer),480pcs/batch,12000pcs/h(182 wafer).

2. 兼容背面刻蝕拋光及單晶背面制絨工藝。
Compatible with rear side etch polishing and mono-crystalline rear side texturing process.

3. 支持多種添加劑技術(shù)。
Suitable for various additives.

4. 支持最薄120um硅片。
Wafer thickness handling capability up to 120μm.

5. 潔凈區(qū)域干燥,自潔凈系統(tǒng)。
With dry clean area and self-cleaning system.

6. 快速換液,在線換液。
Quick inline bath change.

7. 支持MES、RFID及選配在線稱重功能。
Suitable with MES, RFID system, inline weight testing optional.


設(shè)備參數(shù) Parameters